FDG316P absolute maximum ratings t a = 25c unless otherwise noted symbol parameter ratings units v dss drain-source voltage -30 v v gss gate-source voltage 20 v i d drain current - continuous (note 1a) -1.6 a - pulsed -6 power dissipation for single operation (note 1a) 0.75 w p d (note 1b) 0.48 t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1b) 260 c/w package marking and ordering information device marking device reel size tape width quantity . 3 6 f d g 316p 7 ? ? 8 m m 3000 un i t s applications ? dc/dc converter ? load switch ? power management features ? -1.6 a, -30 v. r ds(on) = 0.19 ? @ v gs = -10 v r ds(on) = 0.30 ? @ v gs = -4.5 v. ? low gate charge (3.5nc typical). ? high performance trench technology for extremely low r ds(on) . ? compact industry standard sc70-6 surface mount package. sc70-6 d s d g d d 3 5 6 4 1 2 3 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width 300 s, duty cycle 2.0% electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = -250 a -30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25 c -34 mv/ c i dss zero gate voltage drain current v ds = -24 v, v gs = 0 v -1 a i gss gate-body leakage forward v gs = 16 v, v ds = 0 v 100 na i gss gate-body leakage reverse v gs = -16 v, v ds = 0 v -100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = -250 a -1 -1.6 -3 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = -250 a, referenced to 25 c 3.5 mv/ c r ds(on) static drain-source on-resistance v gs = -10 v, i d = -1.6 a v gs = -10 v, i d = -1.6 a,t j =125 c v gs = -4.5 v, i d = -1.3 a 0.16 0.22 0.23 0.19 0.31 0.30 ? i d(on) on-state drain current v gs = -4.5 v, v ds = -5 v -3 a g fs forward transconductance v ds = -5 v, i d = -0.5 a 3 s dynamic characteristics c iss input capacitance 165 pf c oss output capacitance 60 pf c rss reverse transfer capacitance v ds = -15 v, v gs = 0 v, f = 1.0 mhz 25 pf switching characteristics (note 2) t d(on) turn-on delay time 8 20 ns t r turn-on rise time 9 20 ns t d(off) turn-off delay time 14 30 ns t f turn-off fall time v dd = -15 v, i d = -1 a, v gs = -10 v, r gen = 6 ? 210ns q g total gate charge 3.5 5 nc q gs gate-source charge 0.6 nc q gd gate-drain charge v ds = -15 v, i d = -1.6 a, v gs = -10 v 0.8 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -0.42 a v sd drain-source diode forward voltage v gs = 0 v, i s = -0.42 a (note 2) 0.75 -1.2 v a) 170 c/w when mounted on a 1 in 2 pad of 2oz copper. b) 260 c/w when mounted on a minimum pad. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com FDG316P product specification
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